052-6210 revc 3-2001 APT20GT60BR to-247 g c e g c e APT20GT60BR 600v 40a the thunderbolt igbt ? is a new generation of high voltage power igbts. using non-punch through technology the thunderbolt igbt? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 150khz ? low tail current ? ultra low leakage current ? avalanche rated ? rbsoa and scsoa rated thunderbolt igbt ? maximum ratings all ratings: t c = 25c unless otherwise specified. static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com min typ max 600 -15 345 1.6 2.0 2.5 2.8 40 1000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.5ma) collector-emitter reverse breakdown voltage (v ge = 0v, i c = 50ma) gate threshold voltage (v ce = v ge , i c = 500a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 25c) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces rbv ces v ge (th) v ce (on) i ces i ges unit volts a na symbol v ces v cgr v ec v ge i c1 i c2 i cm i lm e as p d t j ,t stg t l APT20GT60BR 600 600 15 20 40 20 80 40 40 175 -55 to 150 300 unit volts amps mj watts c parameter collector-emitter voltage collector-gate voltage (r ge = 20k w ) emitter-collector voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 90c pulsed collector current 1 @ t c = 25c rbsoa clamped inductive load current @ r g = 11 w t c = 125c single pulse avalanche energy 2 total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec.
052-6210 revc 3-2001 APT20GT60BR symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.5v ces i c = i c2 r g = 10 w inductive switching (150c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 w t j = +150c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 w t j = +25c v ce = 20v, i c = i c2 min typ max 1045 1200 110 160 65 110 91 140 5.9 10 40 60 9.0 20 27 50 112 170 162 320 13 26 15 30 170 260 110 220 235 470 595 1190 830 1660 12 20 16 30 129 190 45 90 575 1150 4 unit pf nc ns ns uj ns uj s unit c/w oz gm lb?in n?m min typ max 0.72 40 0.22 6.1 10 1.1 characteristic junction to case junction to ambient package weight mounting torque ( using a 6-32 or 3mm binding head machine screw ) symbol r q jc r q ja w t torque thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 i c = i c2 , v cc = 50v, r ge = 25 w , l = 200h, t j = 25c 3 see mil-std-750 method 3471 apt reserves the right to change, without notice, the specifications and information contained herein.
052-6210 revc 3-2001 APT20GT60BR v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 1, typical output characteristics (t j = 25c) figure 2, typical output characteristics (t j = 150c) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 3, typical output characteristics @ v ge = 15v figure 4, maximum forward safe operating area v ce , collector-to-emitter voltage (volts) q g , total gate charge (nc) figure 5, typical capacitance vs collector-to-emitter voltage figure 6, gate charges vs gate-to-emitter voltage rectangular pulse duration (seconds) figure 7, maximum effective transient thermal impedance, junction-to-case vs pulse duration c, capacitance (pf) i c , collector current (amperes) i c , collector current (amperes) v ge , gate-to-emitter voltage (volts) i c , collector current (amperes) i c , collector current (amperes) 40 30 20 10 0 60 50 40 30 20 10 0 3,000 1,000 500 100 50 10 t c =+25c t j =+150c single pulse 250sec. pulse test v ge = 15v i c = i c2 t j = +25c f = 1mhz v ce =480v v ce =300v 6v 7v 6v c ies c res 8v 5v 8v 7v 5v 1.0 0.5 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z q jc + t c t 1 t 2 p dm 0.05 d=0.5 0.2 0.02 0.01 single pulse c oes 0 4 8 12 16 20 0 4 8 12 16 20 0 1 2 3 4 5 1 5 10 50 100 600 0.01 0.1 1.0 10 50 0 40 80 120 160 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 v ge =15, 10 & 9v z q jc , thermal impedance (c/w) v ce =120v t c =-55c 0.1 operation limited by v ce (sat) 100s 1ms 10ms 40 30 20 10 0 80 10 5 1 20 16 12 8 4 0 v ge =15, 10 & 9v t c =+150c t c =+25c
052-6210 revc 3-2001 APT20GT60BR v cc = 0.66 v ces v ge = +15v t j = +25c i c = i c2 v cc = 0.66 v ces v ge = +15v t j = +125c r g = 10 w v cc = 0.66 v ces v ge = +15v r g = 10 w i c1 0.5 i c2 i c2 i c1 e on e off e on e off 0.5 i c2 i c2 i c , collector current (amperes) total switching energy losses (mj) bv ces , collector-to-emitter breakdown v ce (sat), collector-to-emitter voltage (normalized) saturation voltage (volts) switching energy losses (mj) switching energy losses (mj) i c , collector current (amperes) t j , junction temperature (c) t c , case temperature (c) figure 8, typical v ce (sat) voltage vs junction temperature figure 9, maximum collector current vs case temperature t j , junction temperature (c) r g , gate resistance (ohms) figure 10, breakdown voltage vs junction temperature figure 11, typical switching energy losses vs gate resistance t j , junction temperature (c) i c , collector current (amperes) figure 12, typical switching energy losses vs. junction temperature figure 13, typical switching energy losses vs collector curr ent f, frequency (khz) figure 14,typical load current vs frequency 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.2 1.1 1 0.9 0.8 0.7 2.0 1.0 0.1 100 10 1 40 30 20 10 0 1.0 0.8 0.6 0.4 0.2 0 .6 .5 .4 .3 .2 .1 0 for both: duty cycle = 50% t j = +125c t sink = +90c gate drive as specified power dissapation = 49w i load = i rms of fundamental -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 10 20 30 0.1 1.0 10 100 1000
052-6210 revc 3-2001 APT20GT60BR *driver same type as d.u.t. v cc = 0.66 v ces e ts = e on + e off v ce (on) t d (off) t d (on) t f t r 1 figure 15, switching loss test circuit and waveforms figure 16, resistive switching time test circuit and waveforms 2 v cc r g r l = .5 v ces i c2 10% 90% v ge (on) v ce (off) v ge (off) 2 1 from gate drive circuitry d.u.t. b i c i c 90% 10% 90% 10% 10% 90% e off t f t d (off) t d (on) t r e on i c v clamp 100uh v charge a a b d.u.t. driver* v c a r g v c v c d.u.t. v ce (sat) t=2us t0-247 package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs.
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